Solutions for Every Reliability Challenge

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WLR for GaN SiC 6/8 inch

High-precision wafer-level system for automated reliability testing of GaN, SiC, and other high-power semiconductor devices.

Dynamic HT HV Pulse Control

High-temperature, high-voltage, Pulse Control system with ultra-precision for accelerated reliability screening of power semiconductor devices.

Compact, high-efficiency programmable DC power supply delivering up to 5000 V or 300 A for demanding applications.

Elite Programmable DC Power Supply

Wafer-level reliability test system

The system is designed for electrical reliability testing of 6- and 8-inch GaN and SiC wafer-level devices, fully compliant with JEDEC reliability standards. It delivers high-precision, high-voltage output with accurate current measurement and precise temperature control. All test data is automatically logged, allowing users to generate experiment reports and wafer map diagrams in multiple export formats.

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Product Features

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Function

Customized High-Temperature Semi-Automatic Probe Station
Supports simultaneous burn-in testing of up to five wafers under controlled high-temperature conditions.
Each wafer die features independent protection, with real-time control of over-current and over-voltage limits.
Includes nitrogen protection to prevent wafer oxidation, with automatic overvoltage protection during gas filling.
Compatible with interchangeable burn-in boards or probe cards to accommodate various device packages.
Provides wafer contact detection, along with real-time temperature and pressure monitoring.
Supports standard HTGB, HTRB, and other burn-in test modes, with automated measurement and analysis of parameters such as Vth, IDS, and IGS.
Features built-in wafer map configuration, real-time data visualization, and historical data query functions.
Can connect to a centralized control platform (Smart Core Protection Cloud) and be custom-integrated with MES systems for seamless data management.